| 摘要 |
PROBLEM TO BE SOLVED: To surely and quickly determine an oxygen concentration in an annealing apparatus. SOLUTION: An evaluation substrate 110 having a titanium layer 105 is prepared on a silicon substrate 101 via a thermal oxide film 103, the evaluation substrate 110 is arranged in the annealing apparatus, and the evaluation substrate 110 arranged in the annealing apparatus is treated under a predetermined temperature in an inert gas atmosphere. A maximum treatment temperature is set to 650°C or higher but 800°C or lower in the annealing apparatus during the heat treatment. Thereafter, the resistance of the titanium layer 105 is measured and the measured resistance value is compared with a pre-acquired reference value to determine whether the oxygen concentration in the annealing apparatus is not higher than a predetermined concentration or not. COPYRIGHT: (C)2008,JPO&INPIT
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