| 摘要 |
PROBLEM TO BE SOLVED: To provide a programming method for a ferroelectric memory device, capable of adjusting the level of a reference voltage. SOLUTION: This programming method includes the first step of decoding a signal entered to a signal input part, the second step of activating, when a predetermined program mode is indicated as a result of the decoding, a program mode operation signal corresponding to the program mode to inactivate the signal input part, and the third step of carrying out the program mode according to the program mode operation signal. COPYRIGHT: (C)2008,JPO&INPIT
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