发明名称 |
Method and System For Making Photo-Resist Patterns |
摘要 |
A method of forming a resist pattern in a semiconductor device layer includes forming a buffer layer on a semiconductor device layer and forming a resist layer on the buffer layer. A decomposing agent is released into a portion of the buffer layer by a portion of the resist layer whereupon the portion of the buffer layer and the portion of the resist layer are removed to form a process window substantially free of resist residue that can be subsequently exploited for etching of the semiconductor device layer.
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申请公布号 |
US2008102648(A1) |
申请公布日期 |
2008.05.01 |
申请号 |
US20060555558 |
申请日期 |
2006.11.01 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN CHIN-HSIANG;LU HSIAO-TZU;CHEN KUEI SHUN;CHANG CHING-YU;CHANG VENCENT |
分类号 |
H01L21/302;G03G13/10 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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