发明名称 |
METHOD OF FORMING ISOLATION LAYER OF SEMICONDUCTOR DEVICE |
摘要 |
A method of forming an isolation layer of a semiconductor device includes forming first trenches in an isolation region of a semiconductor substrate. A spacer is formed on sidewalls of each of the first trenches. Second trenches are formed in the isolation region below the corresponding first trenches. Each second trench is narrower and deeper than the corresponding first trench. A first oxide layer is formed on sidewalls and a bottom surface of each of the second trenches. The first trench is filled with an insulating layer.
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申请公布号 |
US2008102579(A1) |
申请公布日期 |
2008.05.01 |
申请号 |
US20060617690 |
申请日期 |
2006.12.28 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
DONG CHA DEOK;CHO WHEE WON;KIM JUNG GEUN;JEONG CHEOL MO;KIM SUK JOONG;LEE JUNG GU |
分类号 |
H01L21/8242 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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