Mosfet devices and systems with nitrided gate insulators and methods for forming

摘要

A nonvolatile read-only memory having a thin nitrided tunnel insulator surface with a charge blocking insulator over the nitrided surface is presented. The tunnel insulator may be formed of a metal oxide, a metal oxycarbide, a semiconductor oxide, or oxycarbide. The dielectric structure may be formed by nitridation of a surface of a tunnel insulator using ammonia and deposition of a blocking insulator having a larger band gap than the tunnel insulator. The dielectric structure may form part of a memory device, as well as other devices and systems.