Self-aligned method of forming a semiconductor memory array of floating gate memory cells with source side erase, and a memory array made thereby

摘要

A method of forming an array of floating gate memory cells, and an array formed thereby, wherein each memory cell includes a substrate of semiconductor material having a first conductivity type, source and drain regions formed in the substrate, a block of conductive material disposed over and electrically connected to the source, and a floating gate having a first portion disposed over and insulated from the source region and a second portion disposed over and insulated from the channel region. The floating gate first portion includes a sloped upper surface and a side surface that meet at an acute edge. An electrically conductive control gate is disposed over and insulated from the channel region for controlling a conductivity thereof.