发明名称 Organic field effect transistor and semiconductor device
摘要 It is an object to provide an organic field effect transistor including an electrode which can reduce an energy barrier at an interface between a conductive layer and a semiconductor layer, and a semiconductor device including the organic field effect transistor. A composite layer containing an organic compound and an inorganic compound is provided in at least part of one of a source electrode and a drain electrode in an organic field effect transistor, and as the organic compound, a carbazole derivative represented by the general formula (1) is used. By providing the composite layer in at least part of one of the source electrode and the drain electrode, an energy barrier at an interface between a conductive layer and a semiconductor layer can be reduced.
申请公布号 US2008099757(A1) 申请公布日期 2008.05.01
申请号 US20070657718 申请日期 2007.01.25
申请人 FURUKAWA SHINOBU;IMAHAYASHI RYOTA;KATO KAORU 发明人 FURUKAWA SHINOBU;IMAHAYASHI RYOTA;KATO KAORU
分类号 H01L29/08;H01L29/76;H01L35/24;H01L51/00 主分类号 H01L29/08
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