Electron Beam Apparatus and Electron Beam Inspection Method

摘要

The present invention provides a charged-particle beam inspection technology that enables to acquire a shadow contrast enhanced image, and to detect a shallow roughness with sufficient sensitively, which is caused by a micro-scale or nano-scale foreign matter in an inspection of a semiconductor device having a circuit pattern or the like. Immersion objective lens is employed as an objective lens for the high-resolution observation. A converged electron beam is obtained due to the objective lens. An assist electrode, a right detector and a left detector are provided in the objective lens. A velocity component of a secondary electron caused by the irradiation of the sample with an electron beam is discriminated. An azimuth component is further discriminated.