发明名称 APPARATUS AND METHOD FOR REACTIVE ATOM PLASMA PROCESSING FOR MATERIAL DEPOSITION
摘要 A method for shaping a surface of a workpiece, comprises positioning at least one of a workpiece and an inductively-coupled plasma (ICP) torch including three concentrically arranged tubes. A plasma gas is introduced to an outer tube of the ICP torch and energy is transferred from a radio frequency (RF) power source to the plasma gas to generate an excitation zone at least partially downstream of the ICP torch. A reactive reactive precursor is introduced to the excitation zone, and an auxiliary gas is introduced to the intermediate tube to control a position of the excitation zone relative to the ICP torch so that a controlled distribution of reactive species is formed. The surface is shaped by removing material from the surface of the workpiece with at least a portion of the reactive species and adding material to the surface of the workpiece with at least a portion of the reactive species.
申请公布号 US2008099441(A1) 申请公布日期 2008.05.01
申请号 US20070962012 申请日期 2007.12.20
申请人 RAPT INDUSTRIES, INC. 发明人 CARR JEFFREY W.
分类号 B44C1/22;H05H1/26;C03C15/00;C23C16/04;C23C16/513;H01L21/00;H01L21/302;H01L21/3065;H01L21/3105;H01L21/465;H05H1/30;H05H1/42 主分类号 B44C1/22
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