摘要 |
A substrate processing method capable of preventing a reduction in productivity of the fabrication of a semiconductor device from a substrate. An HF gas is supplied toward a wafer having a thermally-oxidized film, a BPSG film, and a deposit film, to thereby selectively etch the BPSG film and the deposit film using fluorinated acid. A residual matter of H<SUB>2</SUB>SiF<SUB>6 </SUB>produced at the time of etching is decomposed into HF and SiF<SUB>4 </SUB>by being heated.
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