发明名称 |
Apparatus and Method For Controlling Relative Particle Speeds In A Plasma |
摘要 |
An apparatus for controlling a plasma etching process includes plasma control structure that can vary a size of a plasma flow passage, vary a speed of plasma flowing through the plasma flow passage, vary plasma concentration flowing through the plasma flow passage, or a combination thereof.
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申请公布号 |
US2008099439(A1) |
申请公布日期 |
2008.05.01 |
申请号 |
US20070624838 |
申请日期 |
2007.01.19 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHANG SHIH MING;LU CHI-LUN |
分类号 |
C23F1/00;H01L21/302 |
主分类号 |
C23F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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