发明名称 |
Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof |
摘要 |
Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing metal, silicon and oxygen, a gate insulating film structure having a laminated structure of an amorphous metal oxide film and metal silicate film, or a gate insulating film structure having a first gate insulating film including an oxide film of a first metal element and a second gate insulating film including a metal silicate film of a second metal element.
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申请公布号 |
US2008102616(A1) |
申请公布日期 |
2008.05.01 |
申请号 |
US20070999958 |
申请日期 |
2007.12.07 |
申请人 |
TSUNASHIMA YOSHITAKA;IHUMIYA SEIJI;SUIZU YASUMASA;OZAWA YOSHIO;MIYANO KIYOTAKA;TANAKA MASAYUKI |
发明人 |
TSUNASHIMA YOSHITAKA;IHUMIYA SEIJI;SUIZU YASUMASA;OZAWA YOSHIO;MIYANO KIYOTAKA;TANAKA MASAYUKI |
分类号 |
H01L21/283;H01L21/28;H01L21/316;H01L21/336;H01L21/8234;H01L29/49;H01L29/51;H01L29/78 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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