| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element in which current dispersion characteristics can be enhanced without thickening an active layer or a semiconductor layer, and without increasing the area of a first electrode. <P>SOLUTION: In a semiconductor light emitting element 1 having first and second conductivity type clad layers 2 and 3, and an active layer 4, multilayer film layers 9 and 10 each transparent for light and having a band gap larger than that of the active layer 4 and a lattice matching that of the active layer 4 are formed between the first conductivity type clad layer 2 and the active layer 4 and between the active layer 4 and the second conductivity type clad layer 3. <P>COPYRIGHT: (C)2008,JPO&INPIT |
