| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor element which prevents a loss of a drain contact plug caused by an etching gas during a metal wiring overetching process. SOLUTION: A first insulating film 102 having a drain contact plug 104 is formed at the upper part of a semiconductor substrate 100. A second insulating film 106 is formed at the upper part of the first insulating film 102 and the drain contact plug 104. Then the second insulating film 106 is etched to expose the upper part of the drain contact plug 104. Then, a glue film 110 and a metal film 112 are formed at the upper part of the semiconductor substrate 100 which has a metal wiring contact hole 108 (as shown Fig.1C). Thus, since a certain thickness of the second insulating film 106 is left at the upper part of the drain contact plug 104 during the overetching process for forming metal wiring 116, even if an unconformable part is generated between the drain contact plug 104 and the metal wiring 116, the loss of the drain contact plug 104 caused by an SF<SB>6</SB>gas acting as an etching gas is prevented. COPYRIGHT: (C)2008,JPO&INPIT
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