| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, with which fully thick epitaxial film can be grown, while keeping selectivity. SOLUTION: The manufacturing method comprises a process (step 301) for bringing in a substrate, having at least a silicone exposure face and an exposure face of a silicon oxide film or a silicone nitride film on a surface into a treatment chamber, a process (step 302) for heating the substrate in the chamber to a prescribed temperature, a first gas supply process (step 303) for supplying first treatment gas, comprising at least silicone and second treatment gas for etching into the chamber and a gas supply process (step 304) for supplying at least second treatment gas into the chamber in a state where first treatment gas is not supplied. The first gas supply process and the second gas supply process are, repetitively performed by a prescribed number of times, and the epitaxial film is selectively grown on the silicon exposure face on the surface of the substrate. COPYRIGHT: (C)2008,JPO&INPIT
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