发明名称 NANOSTRUCTURE AND METHOD FOR MANUFACTURING NANOSTRUCTURE
摘要 PROBLEM TO BE SOLVED: To manufacture a nanowire or ring structure having a bend in the middle with high controllability. SOLUTION: After metal fine particles 12 are formed on a semiconductor substrate 11, a nanostructure having nodes 14a, 14b inserted in the middle of nanowires 13a to 13c is formed by carrying out VLS (vapor liquid solid) growth while alternately switching a first material gas and a second material gas, and nodes 14a, 14b coupled to the ends of nanowires 13a to 13c are thinned and then subjected to selective epitaxial growth to selectively form rings 15a, 15b around the nodes 14a, 14b, respectively. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008100335(A) 申请公布日期 2008.05.01
申请号 JP20060286611 申请日期 2006.10.20
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 TATENO KOUTA
分类号 B82B3/00;B82B1/00;C09K11/02 主分类号 B82B3/00
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