发明名称 |
STRUCTURE OF THIN FILM TRANSISTOR |
摘要 |
A structure of a thin film transistor (TFT) is provided. A substrate has a first surface and a second surface opposite to each other, in which the first surface has a patterned mask layer. A patterned first electrode layer is disposed on the second surface of the substrate and has a gate portion and a capacitor electrode portion. A patterned second electrode layer is disposed on the second surface of the substrate and has a source and a drain, in which the patterned second electrode layer is self-aligned with the patterned first electrode layer by exposing the first surface of the substrate with the patterned mask layer as a mask. An insulating layer is disposed between the patterned first electrode layer and the patterned second electrode layer.
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申请公布号 |
US2008099843(A1) |
申请公布日期 |
2008.05.01 |
申请号 |
US20070871153 |
申请日期 |
2007.10.11 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
WANG YI-KAI;HUANG LIANG-YING;HU TARNG-SHIANG;SHEN YU-YUAN |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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