发明名称 |
Carbon filament memory and fabrication method |
摘要 |
An integrated circuit is described, including a memory element including a first carbon layer rich in a first carbon material and a second carbon layer rich in a second carbon material. The memory element stores information by reversibly forming a conductive channel in the second carbon layer, wherein the conductive channel includes the first carbon material.
|
申请公布号 |
US2008099752(A1) |
申请公布日期 |
2008.05.01 |
申请号 |
US20070708757 |
申请日期 |
2007.02.20 |
申请人 |
KREUPL FRANZ;KUND MICHAEL;UFERT KLAUS-DIETER |
发明人 |
KREUPL FRANZ;KUND MICHAEL;UFERT KLAUS-DIETER |
分类号 |
H01L29/02 |
主分类号 |
H01L29/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|