| 摘要 |
By forming a cap layer on a dielectric barrier layer of a low-k dielectric material stack, the interaction of UV radiation during the generation of pores in the low-k dielectric material may be significantly reduced. In some illustrative embodiments, the cap layer may comprise titanium oxide and/or vanadium oxide which may provide a high degree of reflectivity and absorption, respectively. The layer thickness of the cap layer may be 10 nm or significantly less, thereby reducing any adverse influence on the overall performance of the resulting layer stack.
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