| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve problems of a performance improving technique in microfabrication of a semiconductor element using an actinic ray or radiation, particularly KrF excimer laser light, an electron beam or EUV light, and to provide a positive resist composition that simultaneously satisfies high sensitivity and reduction in LWR (line width roughness) and density distribution dependency and also has good dissolution contrast and a pattern-forming method using the same. <P>SOLUTION: The resist composition includes a resin obtained by intramolecularly or intermolecularly crosslinking a polymer containing a secondary benzyl acid-decomposable group with an acid-decomposable crosslinking group; and a compound that generates an acid upon irradiation with an actinic ray or radiation. The pattern-forming method using the same is also provided. <P>COPYRIGHT: (C)2008,JPO&INPIT |
