METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a specific method of manufacturing a semiconductor device to increase the mechanical strength of a Low-k film by considering an atmospheric gas in a UV curing chamber. SOLUTION: A semiconductor substrate SB having an interlayer insulating film 3 formed thereon is accommodated in a chamber, and a large quantity of a nitrogen gas is introduced into the chamber to purge air or the like in the chamber and to replace an atmospheric gas in the chamber with a nitrogen gas. Thereafter, a trace of an oxygen gas is introduced into the chamber having pressure adjusted at atmospheric pressure or slightly higher than the atmospheric pressure by the purge of the nitrogen gas to attain UV cure. Upon the introduction of the oxygen gas, the oxygen gas is introduced while controlling a flow rate using a flow meter, and adjusted using the flow meter so that an oxygen concentration in the chamber has a constant value in a range of 5 ppm to 400 ppm. COPYRIGHT: (C)2008,JPO&INPIT