| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device of high quality, along with its manufacturing method, in which occurrence of an oxide film at a contact bottom part is suppressed. SOLUTION: The semiconductor device comprises: a first contact that connects to a first silicide film formed on a source-drain region; and a second contact that connects to a second silicide film formed on a gate electrode. The first contact comprises: an oxidation preventing film for preventing oxidizing of the first silicide film, on the inner side wall of a recess provided in an interlayer insulating film; a barrier metal provided on the inner surface side of the oxidation preventing film; and a contact plug provided on the inner surface side of the barrier metal. The second contact comprises: an oxidation preventing film for preventing oxidizing of a second silicide film, on the inner side wall of a recess provided in the interlayer insulating film; a barrier metal provided on the inner surface side of the oxidation preventing film; and a contact plug provided on the inner surface side of the barrier metal. COPYRIGHT: (C)2008,JPO&INPIT
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