| 摘要 |
PROBLEM TO BE SOLVED: To improve controllability of the thickness of a silicon oxynitride film interposed between a metal oxide film and a polycrystalline silicon film composing a lower electrode when forming a capacitor having a capacitive insulating film in a laminated structure. SOLUTION: There are provided: a process of forming the polycrystalline silicon film composing the lower electrode 12 on a ground 11; a process of forming the silicon oxynitride film 15 on the lower electrode 12; a process of forming a tantalum oxide film 16 on the silicon oxynitride film 15; a process of heat-treating the tantalum oxide film 16; and a process of forming a TiN film composing an upper electrode 14 on the tantalum oxide film 16. The process of heat-treating the tantalum oxide film 16 is performed at substrate temperature lower than the highest substrate temperature used in the process of forming the silicon oxynitride film 15. COPYRIGHT: (C)2008,JPO&INPIT
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