发明名称 |
MULTI-STAGE CURING OF LOW K NANO-POROUS FILMS |
摘要 |
Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.
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申请公布号 |
US2008099920(A1) |
申请公布日期 |
2008.05.01 |
申请号 |
US20070876668 |
申请日期 |
2007.10.22 |
申请人 |
APPLIED MATERIALS, INC. A DELAWARE CORPORATION |
发明人 |
SCHMITT FRANCIMAR;ZHENG YI;YIM KANG S.;AHN SANG H.;D'CRUZ LESTER A.;HO DUSTIN W.;DEMOS ALEXANDROS T.;XIA LI-QUN;WITTY DEREK R.;M'SAAD HICHEM |
分类号 |
H01L23/538;B32B3/00;C23C16/40;C23C16/50;C23C16/56;H01L21/3105;H01L21/312;H01L21/316;H01L21/469;H01L21/768;H01L23/52 |
主分类号 |
H01L23/538 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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