| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory in which the layout of the conductive wire in a word line driver is simplified. <P>SOLUTION: A nonvolatile semiconductor memory exemprarily illustrating the present invention comprises: first and second word lines WL1 extending in a first direction and having the same raw address as that of each other; a first block BK1 having a first block address and including the first word line WL1; a second block BK2 having a second block address and including the second word line WL1; first and second signal lines CG1, CG1' extending in a second direction crossing the first direction; a first transmission transistor Tr connected between the first word line WL1 and the first signal line CG1; a second transmission transistor Tr connected between the second word line WL1 and the second signal line CG1'; and a transmission voltage selector 24 for outputting the transmission voltage to the first and second signal lines CG1, CG1'. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
