| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a laser processing method and a laser processing apparatus by which a reformed region where is nearest to a prescribed surface can be formed extremely close to the prescribed surface and the reformed region where is nearest to the incoming surface of laser light can be formed extremely close to the incoming surface of the laser light. <P>SOLUTION: By emitting the reflected light of the laser light L which is reflected by the surface 17a of a metal film 17 opposing to the surface 3 which is the incoming surface of the laser light of a processing object 1 onto a silicon wafer 11, a melting treated region 13<SB>1</SB>nearest to the surface 17a of the metal film 17 among the six rows of the melting treated regions 13<SB>1</SB>, 13<SB>2</SB>. is formed. In this way, the melting treated region 13<SB>1</SB>can be formed extremely close to the surface 17a of the metal film 17. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
