发明名称 SEMICONDUCTOR DEVICE
摘要 Provided is a semiconductor device that can reduce the resistance in a horizontal direction of a substrate. A current path in a horizontal direction of a substrate is formed in a direction along a short side of the substrate (chip). For example, adopted is a layout in which an element region on an input terminal side and a current extraction region on an output terminal side are aligned along the short side of the chip. Furthermore, a first bump electrode and a second bump electrode, which are respectively connected to the input terminal and the output terminal, are arranged along the short side of the chip. Thus, the current path in the substrate in the horizontal direction in the substrate is formed to have a wide width and a short length. Accordingly, the resistance of the substrate in the horizontal direction is reduced.
申请公布号 US2008099926(A1) 申请公布日期 2008.05.01
申请号 US20070923335 申请日期 2007.10.24
申请人 SANYO ELECTRIC CO., LTD.;SANYO SEMICONDUCTOR CO., LTD. 发明人 YOSHIDA TETSUYA
分类号 H01L23/52 主分类号 H01L23/52
代理机构 代理人
主权项
地址
您可能感兴趣的专利