发明名称 |
Method of manufacturing III group nitride semiconductor thin film and method of manufacturing III group nitride semiconductor device using the same |
摘要 |
A method of manufacturing a III group nitride semiconductor thin film and a method of manufacturing a nitride semiconductor light emitting device employing the III group nitride semiconductor thin film manufacturing method, the III group nitride semiconductor thin film manufacturing method including: growing a first nitride single crystal on a substrate for growing a nitride; applying an etching gas to a top surface of the first nitride single crystal to selectively form a plurality of pits in a high dislocation density area; and growing a second nitride single crystal on the first nitride single crystal to maintain the pits to be void.
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申请公布号 |
US2008099781(A1) |
申请公布日期 |
2008.05.01 |
申请号 |
US20070898955 |
申请日期 |
2007.09.18 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
CHOI RAK JUN;VLADIMIR KURESHOV;OH BANG WON;PARK GIL HAN;PARK HEE SEOK;PARK SEONG EUN;PARK YOUNG MIN;KIM MIN HO |
分类号 |
H01L21/20;H01L33/00 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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