| 摘要 |
A substrate comprising a resist layer overlying a dielectric feature, is processed in a substrate processing chamber comprising an antenna, and first and second process electrodes. A process gas comprising CO<SUB>2 </SUB>is introduced into the chamber. The process gas is energized to form a plasma by applying a source voltage to the antenna, and by applying to the electrodes, a first bias voltage having a first frequency of at least about 10 MHz and a second bias voltage having a second frequency of less than about 4 MHz. The ratio of the power level of the first bias voltage to the second bias voltage is sufficient to obtain an edge facet height of the underlying dielectric feature that is at least about 10% of the height of the dielectric feature.
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