发明名称 METHOD AND APPARATUS FOR MANUFACTURING CLEANED SUBSTRATES OR CLEAN SUBSTRATES WHICH ARE FURTHER PROCESSED
摘要 Plasma etch-cleaning of substrates is performed by means of a plasma discharge arrangement comprising an electron source cathode ( 5 ) and an anode arrangement ( 7 ). The anode arrangement ( 7 ) comprises on one hand an anode electrode ( 9 ) and on the other hand and electrically isolated therefrom a confinement ( 11 ). The confinement ( 11 ) has an opening ( 13 ) directed towards an area (S) of a substrate ( 21 ) to be cleaned. The electron source cathode ( 5 ) and the anode electrode ( 9 ) are electrically supplied by a supply circuit with a supply source ( 19 ). The circuit is operated electrically floating.
申请公布号 US2008099039(A1) 申请公布日期 2008.05.01
申请号 US20070870119 申请日期 2007.10.10
申请人 发明人 KRASSNITZER SIEGFRIED;CSTOEHL OLIVER;LEWIS DANIEL
分类号 B08B6/00 主分类号 B08B6/00
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