| 摘要 |
A method of growing group III-nitride crystals in a mixture of supercritical ammonia and nitrogen, and the group-III crystals grown by this method. The group III-nitride crystal is grown in a reaction vessel in supercritical ammonia using a source material or nutrient that is polycrystalline group III-nitride, amorphous group III-nitride, group-III metal or a mixture of the above, and a seed crystal that is a group-III nitride single crystal. In order to grow high-quality group III-nitride crystals, the crystallization temperature is set at 550° C. or higher. Theoretical calculations show that dissociation of NH<SUB>3 </SUB>at this temperature is significant. However, the dissociation of NH<SUB>3 </SUB>is avoided by adding extra N<SUB>2 </SUB>pressure after filling the reaction vessel with NH<SUB>3</SUB>. |
