发明名称 |
Semiconductor device and semiconductor device manufacturing method |
摘要 |
A semiconductor device including a semiconductor substrate having a logic formation region in which a memory device is formed and a logic formation region in which a logic device is formed; a first impurity region formed in an upper surface of said semiconductor substrate in the logic formation region; a second impurity region formed in an upper surface of the semiconductor substrate in said logic formation region; a third impurity region formed in an upper surface of the first impurity region and having a conductivity type different from that of the second impurity region; a fourth region formed in an upper surface of the second impurity region and having a conductivity type different from that of the second impurity region; a first silicide film formed in an upper surface of the third impurity region; a capacitor formed above the first silicide film and electrically connected to the first silicide film; and a second silicide film formed in an upper surface of the fourth impurity region and having a larger thickness than the first silicide film; wherein the first and second silicide films include colbalt.
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申请公布号 |
US2008099813(A1) |
申请公布日期 |
2008.05.01 |
申请号 |
US20070000237 |
申请日期 |
2007.12.11 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
SHINKAWATA HIROKI |
分类号 |
H01L21/28;H01L27/108;H01L21/02;H01L21/8239;H01L21/8242 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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