| 摘要 |
PROBLEM TO BE SOLVED: To provide a phase variation memory in which a variation in resistance is suppressed and stabilized resistance is exhibited. SOLUTION: A memory cell has a first electrode, a second electrode, an insulating material 206, and a phase variation material 208. The phase variation material 208 has a first phase variation portion 210a, a second phase variation portion 210b, a third phase variation portion 210c, a fourth phase variation portion 210d, and a fifth phase variation portion 210e. The first electrode, the second electrode, and the phase variation material 208 form a planar structure or a bridge structure. COPYRIGHT: (C)2008,JPO&INPIT |
