TUNNEL EFFECT TRANSISTORS BASED ON ELONGATED MONOCRYSTALLINE NANO STRUCTURE HAVING HETERO-STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device structure having an enhanced structure using an elongated monocrystalline nanostructure like a nanowire and low power consumption, and a method for manufacturing such a semiconductor device structure. SOLUTION: An elongated monocrystalline nanostructure made of a different semiconducting material is introduced which acts as source (or alternatively drain) region of the TFET. The introduction of the hetero section is such that the lattice mismatch between silicon and germanium does not result in a highly defective interface. A dynamic power reduction as well as a static power reduction can result, compared to conventional MOSFET configurations. Multiple layers of logic can therefore be envisioned with these nanowire Si/Ge TFETs resulting in ultra-high on-chip transistor densities. COPYRIGHT: (C)2008,JPO&INPIT