| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a channel protective film by a simple process without using resist, to reduce the consumption of materials relating to the manufacture of a semiconductor device for reduction of manufacture costs. SOLUTION: A gate electrode is formed on a substrate, a gate insulating film is formed on the gate electrode, and a semiconductor layer is formed on the gate insulating film. An optical absorption layer having an insulating property is formed on the semiconductor layer, and an insulating layer is formed on the optical absorption layer. The optical absorption layer is irradiated with a laser beam from the substrate side, a part each of the optical absorption layer and the insulating layer formed on the optical absorption layer is removed, and the channel protective film is formed. Also, a separated conductive layer is formed on the semiconductor layer and the channel protective film. COPYRIGHT: (C)2008,JPO&INPIT |
