发明名称 SEMICONDUCTOR APPARATUS USING BACK-SIDE HIGH-WITHSTAND-VOLTAGE INTEGRATED CIRCUIT
摘要 A semiconductor apparatus includes an electroconductive member; a switching device electrically connected to the electroconductive member on the electroconductive member and having a withstand voltage between a front side and a back side as a first withstand voltage; a back-side high-withstand-voltage integrated circuit provided on the electroconductive member separately from the switching device, incorporating a control circuit for controlling turning-on/off of the switching device, and having a withstand voltage between a front side and a back side as a second withstand voltage higher than the first withstand voltage; an insulating substrate provided on the electroconductive member separately from the switching device and the back-side high-withstand-voltage integrated circuit; input/output wiring connected to the insulating substrate; first wiring connecting the insulating substrate and the switching device; and second wiring connecting the insulating substrate and back-side high-withstand-voltage integrated circuit.
申请公布号 US2008099838(A1) 申请公布日期 2008.05.01
申请号 US20070673756 申请日期 2007.02.12
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 NISHIMURA KAZUHIRO
分类号 H01L29/94 主分类号 H01L29/94
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