METHOD OF FORMING COPPER WIRING IN SEMICONDUCTOR DEVICE

摘要

A semiconductor package includes method of forming a copper wiring may comprise forming an interlayer insulation film provided with a damascene pattern for wiring over a semiconductor substrate; depositing a barrier metal film over a surface of the damascene pattern and the interlayer insulation film; depositing a copper film over the barrier metal film so as to fill the damascene pattern; and performing an electrochemical mechanical polishing by using a fixed-abrasive pad, supplying an electrolyte solution, and applying an electric field so as to expose the interlayer insulation film.