| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a back irradiation image sensor which can achieve separation of signal charge among different photoelectric conversion regions even when the depletion layer is made thick in the photoelectric conversion region. <P>SOLUTION: The back irradiation image sensor 100 which performs imaging by irradiating a p-substrate 30 from the back side and reading out charges generated in the p-substrate 30 in response to the light from the surface side of the p-substrate 30 comprises an n-type semiconductor layer 4 formed in the p-substrate 30 and storing the charges, and a p-type semiconductor layer 2 formed from the back side to the inside of the p-substrate wherein an n-type or p-type semiconductor layer or an i-type semiconductor layer having impurity concentration of 1.0×10<SP>14</SP>/cm<SP>3</SP>or less is included between the n-type semiconductor layer 4 and the p-type semiconductor layer 2. <P>COPYRIGHT: (C)2008,JPO&INPIT |
