发明名称 IMAGE SENSOR FOR LOW VOLTAGE OPERATION CHARACTERISTICS IMPROVEMENT
摘要 PROBLEM TO BE SOLVED: To provide an image sensor capable of reducing a dark current component caused by unstable reset of a photodiode, effectively suppressing a noise component caused by discordance of characteristics between pixels, and performing reset and transfer on specific levels even when the photodiode is not completely reset, a method of driving a transfer transistor. SOLUTION: The image sensor includes: a photosensitive pixels including a photodiode for generating a photoelectron, a transfer transistor for transferring the photoelectron to a diffusion node, and a reset transistor for resetting the diffusion node; a driving circuit for generating a driving switching signal with respect to the transfer transistor and the reset transistor; and an intermediary circuit for changing characteristics of the signal to drive the photosensitive pixel in a pseudo pinch-off mode. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008104186(A) 申请公布日期 2008.05.01
申请号 JP20070270534 申请日期 2007.10.17
申请人 KOREA ELECTRONICS TELECOMMUN 发明人 MHEEN BONG KI;CHO MIN HYUNG;KIM MI JIN;SON YOUNG JOO
分类号 H01L27/146;H04N5/335;H04N5/361;H04N5/369;H04N5/374;H04N5/376 主分类号 H01L27/146
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