| 摘要 |
PROBLEM TO BE SOLVED: To prevent increase of contact resistance in a contact of high aspect ratio in a high-density semiconductor device. SOLUTION: This semiconductor device comprises a plurality of semiconductor regions (201, 204) separated by an element isolation region, at least one interlayer insulating film formed on the plurality of semiconductor regions, a plurality of wiring layers formed on the interlayer insulating film, and a plurality of contacts (203, 205) arranged in the interlayer insulating film to electrically connect the plurality of semiconductor regions and the plurality of wiring layers. The plurality of contacts comprise a first group of contacts (205) whose distance to the closest adjoining contact is no less than 3μm, and a second group of contacts (203) whose distance to the closest adjoining contact is less than 3μm. The diameter of the contact hole of the first group of contacts is greater than that of the second group of contacts. The foregoing are the main features of this invention. COPYRIGHT: (C)2008,JPO&INPIT
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