| 摘要 |
PROBLEM TO BE SOLVED: To provide a flash memory adapted to inhibit a leakage current betwwen a gate electrode with sidewall insulating films and an ohmic electrode opposite to the gate electrode, and to provide a method of manufacturing the flash memory. SOLUTION: The flash memory which comprises a tunnel insulating film, a floating electrode, a floating gate insulating film and a control electrode has: a gate electrode structure defined by both sidewall surfaces; a pair of sidewall insulating films 47 which cover both the sidewall surfaces of the gate electrode structure; an insulating film 49 which covers the gate electrode structure in conjunction with the pair of sidewall insulating films; nitride films 49 formed between the surface of the insulating film and sidewall surfaces of the gate electrode structure; contact holes 49A formed at the insulating film to expose the diffusion region; and electrodes 50A, 50B and 50C electrically connected through the contact hole in which the tunnel insulating film, the sidewall insulating films and the nitride films are exposed to the sidewall surfaces of the contact holes. COPYRIGHT: (C)2008,JPO&INPIT
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