| 摘要 |
PROBLEM TO BE SOLVED: To provide an integrated transistor device and a corresponding manufacturing method. SOLUTION: The integrated transistor device comprises: a semiconductor substrate 1; a pillar 1a formed in the semiconductor substrate; a gate trench surrounding the pillar 1a; first source/drain region D1 and S formed in an upper region of the pillar 1a; a gate dielectric 40 formed on the bottom of the gate trench and surrounding a lower region of the pillar 1a; a gate 50 formed on the gate dielectric in the gate trench and surrounding the lower region of the pillar; and at least one second source/drain region formed in an upper region of the semiconductor substrate 1 adjoining the gate trench. COPYRIGHT: (C)2008,JPO&INPIT
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