| 摘要 |
An inductor structure is disclosed in the present invention. The inductor structure is formed in a semiconductor substrate, in which a spiral first conductive layer and the topmost interconnect of a multilevel interconnection structure are simultaneously formed in a first dielectric layer, the first conductive layer has the same material as the topmost interconnect has, a second conductive layer and the via plug of the multilevel interconnection structure are simultaneously formed, the second conductive layer is filled in a trench opening in a second dielectric layer, beneath the first conductive layer, and attached to the bottom of the first conductive layer to become an integrated whole. Thus, the cross-sectional area of the conductive layer of the coil is increased and the resistance can be reduced to obtain higher Q factor.
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