| 发明名称 |
NITRIDE COMPOUND SEMICONDUCTOR TRANSISTOR AND MANUFACTURING METHOD THEREOF |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nitride compound semiconductor transistor capable of enhancing carrier mobility in a channel region of a nitride compound semiconductor layer, and having a gate insulating film of a large breakdown electric field strength. <P>SOLUTION: The transistor has a nitride compound semiconductor layer 3 formed on a substrate 1; a first gate insulating film formed on the nitride compound semiconductor layer 3 and made of a silicon nitride film 6; a second gate insulating film formed on the silicon nitride film 6 and made of a film 7 of a material having a breakdown strength larger than that of the silicon nitride film 7; a gate electrode 8g formed on the second gate insulating film; and ohmic electrodes 10s, 10d ohmic-contacting the nitride compound semiconductor layers 5s, 5d on the side of the gate electrode 8g. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
| 申请公布号 |
JP2008103408(A) |
申请公布日期 |
2008.05.01 |
| 申请号 |
JP20060282772 |
申请日期 |
2006.10.17 |
| 申请人 |
FURUKAWA ELECTRIC CO LTD:THE |
发明人 |
NOMURA TAKEHIKO;NIIYAMA YUUKI;YOSHIDA KIYOTERU |
| 分类号 |
H01L29/78;H01L21/338;H01L29/778;H01L29/786;H01L29/812 |
主分类号 |
H01L29/78 |
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