| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a field effect transistor for reducing distance between a gate electrode and a trench to zero not depending on alignment accuracy and moreover for making narrower an aperture width of the trench not depending on aperture capability of a stepper. SOLUTION: After an insulating film 18A and a resist layer R1 having an aperture H1 having an opening diameter L1 are formed (S1, S2) on a diffusing layer 17, an aperture is formed to the insulating film 18A using a resist layer R1 as a mask (S3). After the resist layer R1 is removed, a gate region 20A is formed to an exposed part of a diffusing layer 17 using the insulating film 18A as a mask (S4). After a resist layer R2 having an aperture H2 having an opening diameter L2 is formed (S5), a gate electrode 21 is formed to a part of the aperture H2 with the lift-off method (S6). A pair of trenches 19 are formed to both sides of the gate electrode 21 using the gate electrode 21 and insulating film 18A as masks (S7). COPYRIGHT: (C)2008,JPO&INPIT
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