| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a single crystal aluminum nitride laminated substrate, which comprises forming a single crystal aluminum nitride film by converting an alumina component into aluminum nitride toward inside from the surface of a single crystal α-Al<SB>2</SB>O<SB>3</SB>substrate, such as a sapphire substrate or the like, and by which the production efficiency can be improved. <P>SOLUTION: The method for producing the single crystal aluminum nitride laminated substrate comprises forming a single crystal aluminum nitride film by nitriding the single crystal α-Al<SB>2</SB>O<SB>3</SB>substrate under a temperature condition of 1,600-1,750°C. The method is characterized by subjecting the surface of the single crystal α-Al<SB>2</SB>O<SB>3</SB>substrate to an activation treatment at 800-1,400°C in an H<SB>2</SB>-gas atmosphere in a pre-stage before nitriding. The reaction rate of a nitriding reaction performed after the activation treatment can be drastically enhanced by the activation treatment, and thereby, it becomes possible to remarkably improve the production efficiency of the single crystal aluminum nitride laminated substrate. <P>COPYRIGHT: (C)2008,JPO&INPIT |
