| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which contact resistance with an anode electrode can be reduced, and to provide a manufacturing method of the semiconductor device. SOLUTION: This semiconductor device is provided with a heterosemiconductor region 3, having a heterojunction with a first main surface of a silicon carbide semiconductor substrate 100 and made of a polycrystalline silicon, having a bandgap different from that of the silicon carbide, a buffer layer 4 made of germanium and having contact with the heterosemiconductor region 3, an anode electrode 5 contacting the buffer layer 4, and a cathode electrode 6 contacting the rear surface of the silicon carbide substrate 1. COPYRIGHT: (C)2008,JPO&INPIT |
