| 摘要 |
PROBLEM TO BE SOLVED: To increase productivity when dividing a wafer, where a plurality of semiconductor device are formed by division with streets, into individual pieces, and to suppress deterioration in quality caused by contamination, surface reforming, or the like. SOLUTION: There are provided: a process of forming a resist 11 covering the outside of a street region on an element formation surface of the wafer 1; a process of performing plasma etching to the wafer 1 from the side of the resist 11 to form a groove 4 in the street region; a process of removing the resist 11 from the wafer 1; and a process of cutting the wafer 1 by a dicing blade 13 in the groove 4 for dividing into each semiconductor device 5. The groove formation by plasma is used together with the cutting, thus increasing the productivity as compared with a conventional method for dividing into individual pieces with plasma only and that for forming two grooves for each street by laser. The groove 4 by the plasma has a tapered shape, cut refuse can be discharged efficiently, and the contamination and the deterioration in quality caused by the cut refuse can be restrained. Heat generation and reforming at a machining section can be restrained as compared with the division by the plasma only. COPYRIGHT: (C)2008,JPO&INPIT |
