METHOD FOR FORMING FINE PATTERN OF SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a fine pattern of a semiconductor element. SOLUTION: This invention includes the steps of: forming a protective film 110 on a to-be-etched film 106; forming a hard mask layer on the protective film 110; iteratively forming a plurality of first mask patterns at first pitch on the hard mask layer; forming a plurality of second mask patterns positioned between each adjacent two first mask patterns out of the plurality of first mask patterns one by one; etching the hard mask layer with the first and second mask patterns as etching masks to form a hard mask pattern for exposing the protective film 110; removing the first and second mask patterns; removing the exposed part of the protective film 110 to expose the to-be-etched film 106; and etching the film to be etched 106 with the hard mask patterns as the etching mask to iteratively form a plurality of fine patterns at the half the first pitch. COPYRIGHT: (C)2008,JPO&INPIT