| 摘要 |
PROBLEM TO BE SOLVED: To control the lifetime of an aging device by a simple circuit. SOLUTION: A semiconductor integrated circuit has a semiconductor substrate 11, an element isolation insulating layer 21 formed in a surface region of the semiconductor substrate 11, and first and second MIS type devices A1 and A2 isolated from each other by the element isolation insulating layer 21 and formed in first and second element regions adjacent to each other in a second direction, respectively. Each of the first and second MIS type devices A1 and A2 has a stack gate structure having a floating gate and a control gate electrode. The first MIS type device A1 functions as an aging device. The second MIS type device A2 functions as a control device which controls an electric charge retention characteristic of the aging device. COPYRIGHT: (C)2008,JPO&INPIT
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